Researchers develop picosecond-level flash memory device

a year ago

Researchers from Fudan University developed a picosecond-level flash memory device with a program speed of 400 picoseconds.
The device can operate 25 billion times per second, making it the fastest semiconductor charge storage device known.
This breakthrough is significant for ultra-fast operations in large AI models.
The device's speed is compared to working 1 billion times in the blink of an eye, far surpassing previous records.
The research was published in the journal Nature under the name PoX.
The breakthrough addresses the speed limit in information storage, crucial for AI and integrated circuits.
Non-volatile storage technology is key for ultra-low power consumption in AI computing.
The team used innovative physics mechanisms, combining two-dimensional Dirac band structure and ballistic transport characteristics.
The super-injection mechanism pushed non-volatile memory speed to its theoretical limit.
This technology could reshape the global storage landscape and support China's leadership in relevant fields.

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