Samsung Debuts zHBM Prototype, Stacking Memory Directly on AI Accelerators
24 days ago
- Samsung unveiled zHBM, a 3D architecture stacking HBM vertically on AI accelerators, delivering up to 8x performance and 3x power efficiency improvement.
- The company introduced zNAND-O, a high-performance NAND flash with TSV technology for on-device AI, shown in 4-layer and 8-layer configurations.
- V10 BV-NAND features over 400 layers with wafer bonding, offering 58% higher density and improved read/write performance.
- Other showcased technologies include HBM4E, HBM5 with Heat Path Block, LPDDR5X-PIM with processing-in-memory, and AI-optimized enterprise SSDs.
- Samsung highlighted its unique position as an integrated device manufacturer providing end-to-end solutions from design to mass production.